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| savantic semiconductor product specification silicon npn power transistors 2n5838 2n5839 2N5840 description with to-3 package low collector saturation voltage high breakdown voltage applications for use in switching power supply and other inductive switching circuits. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n5838 275 2n5839 300 v cbo collector-base voltage 2N5840 open emitter 375 v 2n5838 250 2n5839 275 v ceo collector-emitter voltage 2N5840 open base 350 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a p d total power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2n5838 2n5839 2N5840 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n5838 250 2n5839 275 v ceo(sus) collector-emitter sustaining voltage 2N5840 i c =0.1a ;i b =0 350 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 0.8 v v besat base-emitter saturation voltage i c =2a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 1.0 ma i cev collector cut-off current v ce = rated v ceo ; v be(off) =1.5v 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2n5838 i c =3a ; v ce =3v 8 40 h fe dc current gain 2n5839/5840 i c =2a ; v ce =3v 10 50 f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 5 mhz savantic semiconductor product specification 3 silicon npn power transistors 2n5838 2n5839 2N5840 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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